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dc.contributor.author Xu, H
dc.contributor.author Teitsworth, SW
dc.date.accessioned 2011-04-15T16:46:41Z
dc.date.issued 2010-01-25
dc.identifier.citation Applied Physics Letters, 2010, 96 (2)
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10161/3244
dc.description.abstract High field electronic transport through a strongly coupled superlattice (SL) with a shunting side layer is numerically studied using a drift-diffusion model that includes both vertical and lateral dynamics. The bias voltage corresponds to an average electric field in the negative differential conductivity region of the intrinsic current-field curve of the SL, a condition that generally implies space charge instability. Key structural parameters associated with both the shunt layer and SL are identified for which the shunt layer stabilizes a uniform electric field profile. These results support the possibility to realize a SL-based terahertz oscillator with a carefully designed structure. © 2010 American Institute of Physics.
dc.language.iso en_US en_US
dc.relation.ispartof Applied Physics Letters
dc.relation.isversionof 10.1063/1.3291614
dc.title On the possibility of a shunt-stabilized superlattice terahertz emitter
dc.type Journal Article
dc.description.version Version of Record en_US
duke.date.pubdate 2010-1-11 en_US
duke.description.endpage 22101 en_US
duke.description.issue 2 en_US
duke.description.startpage 22101 en_US
duke.description.volume 96 en_US
dc.relation.journal Applied Physics Letters en_US
pubs.issue 2
pubs.organisational-group /Duke
pubs.organisational-group /Duke/Trinity College of Arts & Sciences
pubs.organisational-group /Duke/Trinity College of Arts & Sciences/Physics
pubs.publication-status Published
pubs.volume 96

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