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dc.contributor.author Everitt, Henry en_US
dc.date.accessioned 2011-04-15T16:46:49Z
dc.date.available 2011-04-15T16:46:49Z
dc.date.issued 2010 en_US
dc.identifier.citation Wellenius,P.;Smith,E. R.;LeBoeuf,S. M.;Everitt,H. O.;Muth,J. F.. 2010. Optimal composition of europium gallium oxide thin films for device applications. Journal of Applied Physics 107(10): 103111-103111. en_US
dc.identifier.issn 0021-8979 en_US
dc.identifier.uri http://hdl.handle.net/10161/3324
dc.description.abstract Europium gallium oxide (EuxGa1-x)(2)O-3 thin films were deposited on sapphire substrates by pulsed laser deposition with varying Eu content from x=2.4 to 20 mol %. The optical and physical effects of high europium concentration on these thin films were studied using photoluminescence (PL) spectroscopy, x-ray diffraction (XRD), and Rutherford backscattering spectrometry. PL spectra demonstrate that emission due to the D-5(0) to F-7(J) transitions in Eu3+ grows linearly with Eu content up to 10 mol %. Time-resolved PL indicates decay parameters remain similar for films with up to 10 mol % Eu. At 20 mol %, however, PL intensity decreases substantially and PL decay accelerates, indicative of parasitic energy transfer processes. XRD shows films to be polycrystalline and beta-phase for low Eu compositions. Increasing Eu content beyond 5 mol % does not continue to modify the film structure and thus, changes in PL spectra and decay cannot be attributed to structural changes in the host. These data indicate the optimal doping for optoelectronic devices based on (EuxGa1-x)(2)O-3 thin films is between 5 and 10 mol %. (C) 2010 American Institute of Physics. [doi:10.1063/1.3319670] en_US
dc.language.iso en_US en_US
dc.publisher AMER INST PHYSICS en_US
dc.relation.isversionof doi:10.1063/1.3319670 en_US
dc.subject eu-doped gan en_US
dc.subject electroluminescent en_US
dc.subject luminescence en_US
dc.subject phosphors en_US
dc.subject displays en_US
dc.subject eu2o3 en_US
dc.subject physics, applied en_US
dc.title Optimal composition of europium gallium oxide thin films for device applications en_US
dc.type Article en_US
dc.description.version Version of Record en_US
duke.date.pubdate 2010-5-15 en_US
duke.description.endpage 103111 en_US
duke.description.issue 10 en_US
duke.description.startpage 103111 en_US
duke.description.volume 107 en_US
dc.relation.journal Journal of Applied Physics en_US

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