Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon

dc.contributor.author	Palit, Sabarni	en_US
dc.contributor.author	Huang, Mengyuan	en_US
dc.contributor.author	Jokerst, Nan M	en_US
dc.date.accessioned	2011-06-21T17:27:41Z
dc.date.available	2011-06-21T17:27:41Z
dc.date.issued	2010	en_US
dc.identifier.citation	Palit,Sabarni;Kirch,Jeremy;Huang,Mengyuan;Mawst,Luke;Jokerst,Nan Marie. 2010. Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon. Optics Letters 35(20): 3474-3476.	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://hdl.handle.net/10161/4223
dc.description.abstract	A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260 A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%. (C) 2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.publisher	OPTICAL SOC AMER	en_US
dc.relation.isversionof		en_US
dc.subject	substrate	en_US
dc.subject	optics	en_US
dc.title	Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon	en_US
dc.title.alternative		en_US
dc.description.version	Version of Record	en_US
duke.date.pubdate	2010-10-15	en_US
duke.description.endpage	3476	en_US
duke.description.issue	20	en_US
duke.description.startpage	3474	en_US
duke.description.volume	35	en_US
dc.relation.journal	Optics Letters	en_US