Ding, LiZhang, ZhiyongLiang, ShiboPei, TianWang, ShengLi, YanZhou, WeiweiLiu, JiePeng, Lian-Mao2023-06-012023-06-012012-022041-17232041-1723https://hdl.handle.net/10161/27511Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.OxidesNanotubes, CarbonMetalsMicroscopy, Electron, ScanningEquipment DesignMaterials TestingSemiconductorsNanotechnologyPhysicsNanotubesComputer SystemsSoftwareTransistors, ElectronicJournal article2023-06-01