Browsing by Author "Arnault, EG"
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Item Open Access One-dimensional edge contact to encapsulated MoS2 with a superconductor(AIP Advances, 2021-04-01) Seredinski, A; Arnault, EG; Costa, VZ; Zhao, L; Larson, TFQ; Watanabe, K; Taniguchi, T; Amet, F; Newaz, AKM; Finkelstein, GEstablishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.Item Open Access Subkelvin lateral thermal transport in diffusive graphene(Physical Review B, 2019-03-29) Draelos, AW; Silverman, A; Eniwaye, B; Arnault, EG; Ke, CT; Wei, MT; Vlassiouk, I; Borzenets, IV; Amet, F; Finkelstein, G© 2019 American Physical Society. In this work, we report on hot carrier diffusion in graphene across large enough length scales that the carriers are not thermalized across the crystal. The carriers are injected into graphene at one site and their thermal transport is studied as a function of applied power and distance from the heating source, up to tens of micrometers away. Superconducting contacts prevent out-diffusion of hot carriers to isolate the electron-phonon coupling as the sole channel for thermal relaxation. As local thermometers, we use the amplitude of the universal conductance fluctuations, which varies monotonically as a function of temperature. By measuring the electron temperature simultaneously along the length we observe a thermal gradient which results from the competition between electron-phonon cooling and lateral heat flow.