Browsing by Subject "Doping"
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Item Open Access Dopant Incorporation in InAs/GaAs Quantum Dot Infrared Photodetectors(2009) Zhao, ZhiyaQuantum Dot Infrared Photodetectors (QDIPs) are important alternatives to conventional infrared photodetectors with high potential to provide required detector performance, such as higher temperature operation and multispectral response, due to the 3-D quantum confinement of electrons, discrete energy levels, and intrinsic response to perpendicular incident light due to selection rules. However, excessive dark current density, which causes QDIPs to underperform theoretical predictions, is a limiting factor for the advancement of QDIP technologies. The purpose of this dissertation research is to achieve a better understanding of dopant incorporation into the active region of QDIPs, which is directly related to dark current control and spectral response. From this dissertation research, doping related dipole fields are found to be responsible for excessive dark current in QDIPs.
InAs/GaAs QDIPs were grown using solid source molecular beam epitaxy (MBE) with different doping conditions. The QDIPs were optically characterized using photoluminescence and Fourier transform infrared (FT-IR) spectroscopy. Devices were fabricated using standard cleanroom fabrication procedures. Dark current and capacitance measurements were performed under different temperature to reveal electronic properties of the materials and devices. A novel scanning capacitance microscopy (SCM) technique was used to study the band structure and carrier concentration on the cross section of a quantum dot (QD) heterostructure. In addition, dark current modeling and bandstructure calculations were performed to verify and better understand experimental results.
Two widely used QDIP doping methods with different doping concentrations have been studied in this dissertation research, namely direct doping in InAs QD layer, and modulation doping in the GaAs barrier above InAs QD layer. In the SCM experiment, electron redistribution has been observed due to band-bending in the modulation-doping region, while there is no band-bending observed in directly doped samples. A good agreement between the calculated bandstructure and experimental results leads to better understanding of doping in QD structures. The charge filling process in QDs has been observed by an innovative polarization-dependent FT-IR spectroscopy. The red-shift of QD absorbance peaks with increasing electron occupation supports a miniband electronic configuration for high-density QD ensembles. In addition, the FT-IR measurement indicates the existence of donor-complex (DX) defect centers in Si-doped QDIPs. The existence of DX centers and related dipole fields have been confirmed by dark current measurements to extract activation energies and by photocapacitance quenching measurements.
With the understanding achieved from experimental results, a further improved dark current model has been developed based on the previous model originally established by Ryzhii and improved by Stiff-Roberts. In the model described in this dissertation, two new factors have been considered. The inclusion of background drift current originating from Si shallow donors in the low bias region results in excellent agreement between calculated and measured dark currents at different temperatures, which has not been achieved by previous models. A very significant effect has been observed in that dark current leakage occurs due to the dipole field caused by doping induced charge distribution and impact-ionized DX centers.
Last but not least, QDIPs featuring the dipole interface doping (DID) method have been designed to reduce the dark current density without changing the activation energy (thus detection wavelength) of QDIPs. The DID samples involve an InAs QD layer directly-doped by Si, as well as Be doping in the GaAs barrier on both sides of the QD layer. The experimental result shows the dark current density has been significantly reduced by 104 times without any significant change to the corresponding activation energy. However, the high p-type doping in the GaAs barrier poses a challenge in that the Fermi level is reduced to be well below the QD energy states. High p-type doping is reported to reduce the dark current, photocurrent and the responsivity of the devices.
To conclude, it is significant to identify to effect of Si-induced defect centers on QDIP dark currents. The subsequent study reveals doping induced dipole fields can have significant effects on QDIP device performance, for example, causing charge leakage from QDs and reducing activation energy, thereby increasing dark current density. The DID approach developed in this work is a promising approach that could help address these issues by using controlled dipole fields to reduce dark current density without changing the minimum detectable energy of QDIPs.
Item Open Access Zinc Oxide Nanostructures: Synthesis, Doping and Growth Mechanism(2013) Cho, JinhyunOver the past decade, the study of zinc oxide (ZnO) II-VI semiconducting nanostructures has been a burgeoning research area because of this material's unique electrical and optical properties. Despite the promise of its characteristics for numerous applications, usage of ZnO in the fabrication of nanoscale devices on a commercial scale remains a challenge because of our lack of knowledge of the underlying physics and chemistry of nanostructures. Sustainable progress in nanowire manufacturing techniques requires that we first undertake basic studies to address these poorly understood underlying concepts before we embark on applied engineering. If these fundamental studies prove successful, then characterization, fabrication, and large-scale integration of nanostructures that use ZnO could be applied to a range of engineering fields. This doctoral dissertation is primarily concerned with the synthesis and doping required for the creation of novel ZnO nanostructures and the growth mechanisms of such structures. Numerous studies have been made of various kinds of ZnO nanostructures. However, no studies have been reported of systematic theoretical modeling that uses both density functional theory and as-synthesized nanostructures to explain the growth mechanisms involved in these devices. First, sulfur-doped ZnO nanostars, synthesized through a hydrothermal method, will be discussed. This section uses ab initio simulations in discussing the synthesis of novel ZnO nanostructures and their proposed growth mechanisms. Moreover, this discussion also addresses the optical properties of ZnO structures that cause sulfur doping to enhance their emission of green light. The next section introduces a novel synthetic methodology to reliably produce well-aligned vertical ZnO nanowire arrays on amorphous substrates. Vertical alignment of nanowires significantly improves the performance of devices like LEDs and solar cells. Because these vertically aligned arrays have historically been made using sapphire substrates that hinder their commercialization, substantial effort has been invested in using ZnO nanocrystal seeds to grow vertically aligned ZnO nanowires on silicon substrates. Well-known synthetic methods, such as zinc acetate dissolved in methanol or zinc acetate combined with sodium hydroxide (or potassium hydroxide), have typically been used in pursuit of this goal without a detailed understanding of the mechanisms of seed creation. The consequence of this lack of knowledge has been inconsistent reproducibility in growing vertically aligned nanowires on silicon substrates. This discussion includes the details of mechanisms that explain the why and how of creation of vertical/misoriented ZnO nanocrystal seeds on silicon substrates. In addition, a preferential c-axis-oriented ZnO nanocrystal seed has been successfully synthesized using a solution composed of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2). Lastly, the synthesis of sea urchin-like microstructures known as ZnO sea urchins will be introduced. Among the various kinds ZnO structures, the ZnO sea urchin is a integrated structure composed of a 3-D microsphere and 1-D nanowires. Dye-sensitized solar cells (DSSCs) made of ZnO sea urchins have shown a higher power conversion efficiency than planar nanowires. This is because ZnO sea urchins have a higher surface area per unit of volume than planar nanowire arrays. This larger surface area allows larger amounts of dye to access the semiconducting nanowires. We have synthesized the sea urchin structures composed of ZnOxPy microspheres, a mixed of zinc phosphide (Zn3P2) and ZnO phase, encapsulated in an array of ZnO nanowires. Synthesis of these interesting structures was achieved without resorting to the prefabricated 3-D microsphere templates that other groups used in previous studies. This new approach to the synthesis of ZnO sea urchin structures was accomplished by simply adding Zn3P2 powder to the C (graphite) and ZnO source powders in a chemical vapor transport method. The ZnO sea urchin's material properties and growth mechanism will be characterized and discussed in detail.