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Lattice Engineering of III-Nitride Heterostructures and Their Applications

dc.contributor.advisor Brown, April Susan
dc.contributor.author Kong, Wei
dc.date.accessioned 2016-06-06T14:37:29Z
dc.date.available 2018-04-26T08:17:10Z
dc.date.issued 2016
dc.identifier.uri https://hdl.handle.net/10161/12195
dc.description.abstract <p>III-Nitride materials have recently become a promising candidate for superior applications over the current technologies. However, certain issues such as lack of native substrates, and high defect density have to be overcome for further development of III-Nitride technology. This work presents research on lattice engineering of III-Nitride materials, and the structural, optical, and electrical properties of its alloys, in order to approach the ideal material for various applications. We demonstrated the non-destructive and quantitative characterization of composition modulated nanostructure in InAlN thin films with X-ray diffraction. We found the development of the nanostructure depends on growth temperature, and the composition modulation has impacts on carrier recombination dynamics. We also showed that the controlled relaxation of a very thin AlN buffer (20 ~ 30 nm) or a graded composition InGaN buffer can significantly reduce the defect density of a subsequent epitaxial layer. Finally, we synthesized an InAlGaN thin films and a multi-quantum-well structure. Significant emission enhancement in the UVB range (280 – 320 nm) was observed compared to AlGaN thin films. The nature of the enhancement was investigated experimentally and numerically, suggesting carrier confinement in the In localization centers.</p>
dc.subject Engineering
dc.subject Materials Science
dc.subject Physics
dc.subject III-Nitride
dc.subject Lattice Engineering
dc.subject Molecular Beam Epitaxy
dc.title Lattice Engineering of III-Nitride Heterostructures and Their Applications
dc.type Dissertation
dc.department Electrical and Computer Engineering
duke.embargo.months 23


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