Room temperature photoluminescence from In<inf>x</inf>Al<inf>(1-x)</inf>N films deposited by plasma-assisted molecular beam epitaxy
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© 2014 AIP Publishing LLC.InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10-12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1-x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.
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Kong, W, A Mohanta, AT Roberts, WY Jiao, J Fournelle, TH Kim, M Losurdo, HO Everitt, et al. (2014). Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 105(13). 10.1063/1.4896849 Retrieved from https://hdl.handle.net/10161/13872.
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April S. Brown
Dr. April Brown received her B.S.E.E. from North Carolina State University in 1981, her M.S.E.E. and Ph.D. from Cornell University in 1984 and 1985, respectively. She worked at the Hughes Research Laboratories (now HRL LLC) in Malibu, Ca. from 1986-1993, and spent one year at the Army Research Office in the Physics Division (1988). She joined the Georgia Institute of Technology in 1994 as an Associate Professor and was promoted to Professor in 1999. She was Associate Dean in the College of Engineering from 1999-2001 and Executive Assistant to the President from 2001-2002. In addition, she was named Pettit Professor in Microelectronics in 2001. She joined Duke University as Professor and Chair in July 2002.
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