Universal Nonequilibrium I-V Curve at an Interacting Impurity Quantum Critical Point
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The nonlinear I-V curve at an interacting quantum critical point (QCP) is typically out of reach theoretically. Here, however, we provide an analytical calculation of the I-V curve at a QCP under nonequilibrium conditions and, furthermore, present experimental results to which the theory is compared. The system is a quantum dot coupled to resistive leads: a spinless resonant level interacting with an ohmic electromagnetic environment. A two channel Kondo like QCP occurs when the level is on resonance and symmetrically coupled to the leads. Though similar to a resonant level in a Luttinger liquid, a key difference enables us to obtain the current at finite temperature and bias: because there are modes that do not initially couple to the environment, an analysis in terms of weak backscattering of non-interacting fermions coupled to a modified environment is possible. Drawing on dynamical Coulomb blockade theory, we then obtain an analytical expression for the nonlinear I-V curve. The agreement between our theoretical and experimental results is remarkable.
SubjectCondensed Matter - Mesoscale and Nanoscale Physics
Condensed Matter - Strongly Correlated Electrons
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Harold U. Baranger
Professor of Physics
The broad focus of Prof. Baranger's group is quantum open systems at the nanoscale, particularly the generation of correlation between particles in such systems. Fundamental interest in nanophysics-- the physics of small, nanometer scale, bits of solid-- stems from the ability to control and probe systems on length scales larger than atoms but small enough that the averaging inherent in bulk properties has not yet occurred. Using this ability, entirely unanticipated phenomena ca
Professor of Physics
Gleb Finkelstein is an experimentalist interested in physics of quantum nanostructures, such as Josephson junctions and quantum dots made of carbon nanotubes, graphene, and topological materials. These objects reveal a variety of interesting electronic properties that may form a basis for future quantum devices.
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