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Optimal composition of europium gallium oxide thin films for device applications

dc.contributor.author Everitt, Henry
dc.date.accessioned 2011-04-15T16:46:49Z
dc.date.available 2011-04-15T16:46:49Z
dc.date.issued 2010
dc.identifier.citation Wellenius,P.;Smith,E. R.;LeBoeuf,S. M.;Everitt,H. O.;Muth,J. F.. 2010. Optimal composition of europium gallium oxide thin films for device applications. Journal of Applied Physics 107(10): 103111-103111.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10161/3324
dc.description.abstract Europium gallium oxide (EuxGa1-x)(2)O-3 thin films were deposited on sapphire substrates by pulsed laser deposition with varying Eu content from x=2.4 to 20 mol %. The optical and physical effects of high europium concentration on these thin films were studied using photoluminescence (PL) spectroscopy, x-ray diffraction (XRD), and Rutherford backscattering spectrometry. PL spectra demonstrate that emission due to the D-5(0) to F-7(J) transitions in Eu3+ grows linearly with Eu content up to 10 mol %. Time-resolved PL indicates decay parameters remain similar for films with up to 10 mol % Eu. At 20 mol %, however, PL intensity decreases substantially and PL decay accelerates, indicative of parasitic energy transfer processes. XRD shows films to be polycrystalline and beta-phase for low Eu compositions. Increasing Eu content beyond 5 mol % does not continue to modify the film structure and thus, changes in PL spectra and decay cannot be attributed to structural changes in the host. These data indicate the optimal doping for optoelectronic devices based on (EuxGa1-x)(2)O-3 thin films is between 5 and 10 mol %. (C) 2010 American Institute of Physics. [doi:10.1063/1.3319670]
dc.language.iso en_US
dc.publisher AMER INST PHYSICS
dc.relation.isversionof 10.1063/1.3319670
dc.subject eu-doped gan
dc.subject electroluminescent
dc.subject luminescence
dc.subject phosphors
dc.subject displays
dc.subject eu2o3
dc.subject physics, applied
dc.title Optimal composition of europium gallium oxide thin films for device applications
dc.type Journal article
dc.description.version Version of Record
duke.date.pubdate 2010-5-15
duke.description.issue 10
duke.description.volume 107
dc.relation.journal Journal of Applied Physics
pubs.begin-page 103111


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