Show simple item record Liu, W Lee, M Ding, L Liu, J Wang, ZL
dc.coverage.spatial United States 2011-06-21T17:27:00Z 2010-08-11
dc.identifier.citation Nano Lett, 2010, 10 (8), pp. 3084 - 3089
dc.description.abstract We report the first piezoelectric potential gated hybrid field-effect transistors based on nanotubes and nanowires. The device consists of single-walled carbon nanotubes (SWNTs) on the bottom and crossed ZnO piezoelectric fine wire (PFW) on the top with an insulating layer between. Here, SWNTs serve as a carrier transport channel, and a single-crystal ZnO PFW acts as the power-free, contact-free gate or even an energy-harvesting component later on. The piezopotential created by an external force in the ZnO PFW is demonstrated to control the charge transport in the SWNT channel located underneath. The magnitude of the piezopotential in the PFW at a tensile strain of 0.05% is measured to be 0.4-0.6 V. The device is a unique coupling between the piezoelectric property of the ZnO PFW and the semiconductor performance of the SWNT with a full utilization of its mobility. The newly demonstrated device has potential applications as a strain sensor, force/pressure monitor, security trigger, and analog-signal touch screen.
dc.format.extent 3084 - 3089
dc.language eng
dc.language.iso en_US en_US
dc.relation.ispartof Nano Lett
dc.relation.isversionof 10.1021/nl1017145
dc.title Piezopotential gated nanowire--nanotube hybrid field-effect transistor.
dc.title.alternative en_US
dc.type Journal Article
dc.description.version Version of Record en_US 2010-8-0 en_US
duke.description.endpage 3089 en_US
duke.description.issue 8 en_US
duke.description.startpage 3084 en_US
duke.description.volume 10 en_US
dc.relation.journal Nano Letters en_US
pubs.issue 8
pubs.organisational-group /Duke
pubs.organisational-group /Duke/Trinity College of Arts & Sciences
pubs.organisational-group /Duke/Trinity College of Arts & Sciences/Chemistry
pubs.publication-status Published
pubs.volume 10
dc.identifier.eissn 1530-6992

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