Show simple item record Palit, S Kirch, J Huang, M Mawst, L Jokerst, NM
dc.coverage.spatial United States 2011-06-21T17:27:41Z 2010-10-15
dc.identifier 206399
dc.identifier.citation Opt Lett, 2010, 35 (20), pp. 3474 - 3476
dc.description.abstract A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.
dc.format.extent 3474 - 3476
dc.language eng
dc.language.iso en_US en_US
dc.relation.ispartof Opt Lett
dc.subject Arsenicals
dc.subject Equipment Design
dc.subject Gallium
dc.subject Indium
dc.subject Lasers
dc.subject Light
dc.subject Optics and Photonics
dc.subject Semiconductors
dc.subject Silicon
dc.subject Silicon Dioxide
dc.title Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.
dc.title.alternative en_US
dc.type Journal Article
dc.description.version Version of Record en_US 2010-10-15 en_US
duke.description.endpage 3476 en_US
duke.description.issue 20 en_US
duke.description.startpage 3474 en_US
duke.description.volume 35 en_US
dc.relation.journal Optics Letters en_US
pubs.issue 20
pubs.organisational-group /Duke
pubs.organisational-group /Duke/Pratt School of Engineering
pubs.organisational-group /Duke/Pratt School of Engineering/Electrical and Computer Engineering
pubs.publication-status Published
pubs.volume 35
dc.identifier.eissn 1539-4794

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