Suns- V<inf>OC</inf> characteristics of high performance kesterite solar cells

dc.contributor.author

Gunawan, O

dc.contributor.author

Gokmen, T

dc.contributor.author

Mitzi, DB

dc.date.accessioned

2014-10-06T20:20:16Z

dc.date.issued

2014-01-01

dc.description.abstract

Low open circuit voltage (VOC) has been recognized as the number one problem in the current generation of Cu2ZnSn(Se,S)4 (CZTSSe) solar cells. We report high light intensity and low temperature Suns-VOC measurement in high performance CZTSSe devices. The Suns-VOC curves exhibit bending at high light intensity, which points to several prospective VOC limiting mechanisms that could impact the VOC, even at 1 sun for lower performing samples. These V OC limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects, including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-VOC measurements with different monochromatic illuminations. These limiting factors may also contribute to an artificially lower JSC-VOC diode ideality factor. © 2014 AIP Publishing LLC.

dc.identifier.eissn

1089-7550

dc.identifier.issn

0021-8979

dc.identifier.uri

https://hdl.handle.net/10161/9180

dc.publisher

AIP Publishing

dc.relation.ispartof

Journal of Applied Physics

dc.relation.isversionof

10.1063/1.4893315

dc.title

Suns- VOC characteristics of high performance kesterite solar cells

dc.type

Journal article

duke.contributor.orcid

Mitzi, DB|0000-0001-5189-4612

pubs.issue

8

pubs.organisational-group

Chemistry

pubs.organisational-group

Duke

pubs.organisational-group

Mechanical Engineering and Materials Science

pubs.organisational-group

Pratt School of Engineering

pubs.organisational-group

Trinity College of Arts & Sciences

pubs.publication-status

Published

pubs.volume

116

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