Critical Current Scaling in Long Diffusive Graphene-Based Josephson Junctions.


We present transport measurements on long, diffusive, graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ∼9 μm but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in these junctions ranges from a few nanoamperes up to more than 5 μA, while the Thouless energy, ETh, covers almost 2 orders of magnitude. Over much of this range, the product of the critical current and the normal resistance ICRN is found to scale linearly with ETh, as expected from theory. However, the value of the ratio ICRN/ETh is found to be 0.1-0.2, which much smaller than the predicted ∼10 for long diffusive SNS junctions.





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Publication Info

Ke, Chung Ting, Ivan V Borzenets, Anne W Draelos, Francois Amet, Yuriy Bomze, Gareth Jones, Monica Craciun, Saverio Russo, et al. (2016). Critical Current Scaling in Long Diffusive Graphene-Based Josephson Junctions. Nano letters, 16(8). pp. 4788–4791. 10.1021/acs.nanolett.6b00738 Retrieved from

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Gleb Finkelstein

Professor of Physics

Gleb Finkelstein is an experimentalist interested in physics of quantum nanostructures, such as Josephson junctions and quantum dots made of carbon nanotubes, graphene, and topological materials. These objects reveal a variety of interesting electronic properties that may form a basis for future quantum devices.

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