On the possibility of a shunt-stabilized superlattice terahertz emitter

dc.contributor.author

Xu, H

dc.contributor.author

Teitsworth, SW

dc.date.accessioned

2011-04-15T16:46:41Z

dc.date.issued

2010-01-25

dc.description.abstract

High field electronic transport through a strongly coupled superlattice (SL) with a shunting side layer is numerically studied using a drift-diffusion model that includes both vertical and lateral dynamics. The bias voltage corresponds to an average electric field in the negative differential conductivity region of the intrinsic current-field curve of the SL, a condition that generally implies space charge instability. Key structural parameters associated with both the shunt layer and SL are identified for which the shunt layer stabilizes a uniform electric field profile. These results support the possibility to realize a SL-based terahertz oscillator with a carefully designed structure. © 2010 American Institute of Physics.

dc.description.version

Version of Record

dc.identifier.issn

0003-6951

dc.identifier.uri

https://hdl.handle.net/10161/3244

dc.language.iso

en_US

dc.publisher

AIP Publishing

dc.relation.ispartof

Applied Physics Letters

dc.relation.isversionof

10.1063/1.3291614

dc.relation.journal

Applied Physics Letters

dc.title

On the possibility of a shunt-stabilized superlattice terahertz emitter

dc.type

Journal article

duke.date.pubdate

2010-1-11

duke.description.issue

2

duke.description.volume

96

pubs.begin-page

22101

pubs.issue

2

pubs.organisational-group

Duke

pubs.organisational-group

Physics

pubs.organisational-group

Trinity College of Arts & Sciences

pubs.publication-status

Published

pubs.volume

96

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