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Novel low-side/high-side gate drive and supply with minimum footprint, high power density, and low cost for silicon and wide-bandgap transistors
Abstract
High-power silicon field-effect transistors as well as IGBTs and particularly wide-bandgap
semi¬conductor transistors typically need negative turn-off voltage for a secure off-state,
resilience to spurious turn on, and rapid transition through the saturation mode.
We present a gate driver configuration with compact and very efficient supply of the
high and low sides of power transistor bridges with asymmetric bipolar control voltages
without the need for costly and lossy isolated DCDC converter and only low-voltage
active components. The underlying negative voltage gate driver supply circuit consists
of only a few cost-efficient components, its electrical potential is referenced to
the source of the controlled semiconductor power switch, and its operation is synchronized
with the gate driver output. It outcompetes the established use of isolated DCDC converters
in gate circuits with negative voltage needs with respect to cost, size, reliability,
and efficiency. Importantly, the proposed negative voltage supply allows bootstrapping
without the need for controllable high-voltage semiconductors for the sake of further
cost reduction. We present detailed design rules of the circuit and experimentally
validate circuit and control. In the automo-tive prototype implementation, size of
the gate driver sup-ply was reduced by 61 %, cost by 57 %, and loss by more than 16
%.
Type
Journal articlePermalink
https://hdl.handle.net/10161/21317Published Version (Please cite this version)
10.1109/TPEL.2020.3016923Publication Info
Kacetl, Jan; Kacetl, Tomas; Jaensch, Malte; & Goetz, Stefan (n.d.). Novel low-side/high-side gate drive and supply with minimum footprint, high power
density, and low cost for silicon and wide-bandgap transistors. IEEE Transactions on Power Electronics. 10.1109/TPEL.2020.3016923. Retrieved from https://hdl.handle.net/10161/21317.This is constructed from limited available data and may be imprecise. To cite this
article, please review & use the official citation provided by the journal.
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Stefan M Goetz
Assistant Professor in Psychiatry and Behavioral Sciences

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