Thermodynamic Limit of Crystal Defects with Finite Temperature Tight Binding

dc.contributor.author

Chen, H

dc.contributor.author

Lu, J

dc.contributor.author

Ortner, C

dc.date.accessioned

2017-04-23T15:47:40Z

dc.date.available

2017-04-23T15:47:40Z

dc.date.issued

2017-04-23

dc.description.abstract

We consider a tight binding model for localised crystalline defects with electrons in the canonical ensemble (finite electronic temperature) and nuclei positions relaxed according to the Born--Oppenheimer approximation. We prove that the limit model as the computational domain size grows to infinity is formulated in the grand-canonical ensemble for the electrons. The Fermi-level for the limit model is fixed at a homogeneous crystal level, independent of the defect or electron number in the sequence of finite-domain approximations. We quantify the rates of convergence for the nuclei configuration and for the Fermi-level.

dc.format.extent

28 pages

dc.identifier

http://arxiv.org/abs/1607.06850v1

dc.identifier.uri

https://hdl.handle.net/10161/14058

dc.publisher

Springer Science and Business Media LLC

dc.subject

math-ph

dc.subject

math-ph

dc.subject

math.MP

dc.subject

math.NA

dc.title

Thermodynamic Limit of Crystal Defects with Finite Temperature Tight Binding

dc.type

Journal article

duke.contributor.orcid

Lu, J|0000-0001-6255-5165

pubs.author-url

http://arxiv.org/abs/1607.06850v1

pubs.organisational-group

Chemistry

pubs.organisational-group

Duke

pubs.organisational-group

Mathematics

pubs.organisational-group

Physics

pubs.organisational-group

Trinity College of Arts & Sciences

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
1607.06850v1.pdf
Size:
346.49 KB
Format:
Adobe Portable Document Format