Importance of diameter control on selective synthesis of semiconducting single-walled carbon nanotubes.
dc.contributor.author | Li, Jinghua | |
dc.contributor.author | Ke, Chung-Ting | |
dc.contributor.author | Liu, Kaihui | |
dc.contributor.author | Li, Pan | |
dc.contributor.author | Liang, Sihang | |
dc.contributor.author | Finkelstein, Gleb | |
dc.contributor.author | Wang, Feng | |
dc.contributor.author | Liu, Jie | |
dc.date.accessioned | 2019-12-22T00:34:49Z | |
dc.date.available | 2019-12-22T00:34:49Z | |
dc.date.issued | 2014-08-11 | |
dc.date.updated | 2019-12-22T00:34:45Z | |
dc.description.abstract | The coexistence of semiconducting and metallic single-walled carbon nanotubes (SWNTs) during synthesis is one of the major bottlenecks that prevent their broad application for the next-generation nanoelectronics. Herein, we present more understanding and demonstration of the growth of highly enriched semiconducting SWNTs (s-SWNTs) with a narrow diameter distribution. An important fact discovered in our experiments is that the selective elimination of metallic SWNTs (m-SWNTs) from the mixed arrays grown on quartz is diameter-dependent. Our method emphasizes controlling the diameter distribution of SWNTs in a narrow range where m-SWNTs can be effectively and selectively etched during growth. In order to achieve narrow diameter distribution, uniform and stable Fe-W nanoclusters were used as the catalyst precursors. About 90% of as-prepared SWNTs fall into the diameter range 2.0-3.2 nm. Electrical measurement results on individual SWNTs confirm that the selectivity of s-SWNTs is ∼95%. The present study provides an effective strategy for increasing the purity of s-SWNTs via controlling the diameter distribution of SWNTs and adjusting the etchant concentration. Furthermore, by carefully comparing the chirality distributions of Fe-W-catalyzed and Fe-catalyzed SWNTs under different water vapor concentrations, the relationship between the diameter-dependent and electronic-type-dependent etching mechanisms was investigated. | |
dc.identifier.issn | 1936-0851 | |
dc.identifier.issn | 1936-086X | |
dc.identifier.uri | ||
dc.language | eng | |
dc.publisher | American Chemical Society (ACS) | |
dc.relation.ispartof | ACS nano | |
dc.relation.isversionof | 10.1021/nn503265g | |
dc.subject | Science & Technology | |
dc.subject | Physical Sciences | |
dc.subject | Technology | |
dc.subject | Chemistry, Multidisciplinary | |
dc.subject | Chemistry, Physical | |
dc.subject | Nanoscience & Nanotechnology | |
dc.subject | Materials Science, Multidisciplinary | |
dc.subject | Chemistry | |
dc.subject | Science & Technology - Other Topics | |
dc.subject | Materials Science | |
dc.subject | single-walled carbon nanotubes | |
dc.subject | semiconducting | |
dc.subject | diameter control | |
dc.subject | selective etching | |
dc.subject | Fe-W nanoclusters | |
dc.subject | FIELD-EFFECT TRANSISTORS | |
dc.subject | GROWTH | |
dc.subject | CATALYST | |
dc.subject | ARRAYS | |
dc.subject | REACTIVITY | |
dc.subject | DENSITY | |
dc.subject | VAPOR | |
dc.subject | CHEMISTRY | |
dc.subject | DEVICES | |
dc.subject | STRAIN | |
dc.title | Importance of diameter control on selective synthesis of semiconducting single-walled carbon nanotubes. | |
dc.type | Journal article | |
duke.contributor.orcid | Finkelstein, Gleb|0000-0002-0883-0741 | |
duke.contributor.orcid | Liu, Jie|0000-0003-0451-6111 | |
pubs.begin-page | 8564 | |
pubs.end-page | 8572 | |
pubs.issue | 8 | |
pubs.organisational-group | Trinity College of Arts & Sciences | |
pubs.organisational-group | Duke | |
pubs.organisational-group | Physics | |
pubs.organisational-group | Duke Institute for Brain Sciences | |
pubs.organisational-group | University Institutes and Centers | |
pubs.organisational-group | Institutes and Provost's Academic Units | |
pubs.organisational-group | Chemistry | |
pubs.publication-status | Published | |
pubs.volume | 8 |
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