Importance of diameter control on selective synthesis of semiconducting single-walled carbon nanotubes.

dc.contributor.author

Li, Jinghua

dc.contributor.author

Ke, Chung-Ting

dc.contributor.author

Liu, Kaihui

dc.contributor.author

Li, Pan

dc.contributor.author

Liang, Sihang

dc.contributor.author

Finkelstein, Gleb

dc.contributor.author

Wang, Feng

dc.contributor.author

Liu, Jie

dc.date.accessioned

2019-12-22T00:34:49Z

dc.date.available

2019-12-22T00:34:49Z

dc.date.issued

2014-08-11

dc.date.updated

2019-12-22T00:34:45Z

dc.description.abstract

The coexistence of semiconducting and metallic single-walled carbon nanotubes (SWNTs) during synthesis is one of the major bottlenecks that prevent their broad application for the next-generation nanoelectronics. Herein, we present more understanding and demonstration of the growth of highly enriched semiconducting SWNTs (s-SWNTs) with a narrow diameter distribution. An important fact discovered in our experiments is that the selective elimination of metallic SWNTs (m-SWNTs) from the mixed arrays grown on quartz is diameter-dependent. Our method emphasizes controlling the diameter distribution of SWNTs in a narrow range where m-SWNTs can be effectively and selectively etched during growth. In order to achieve narrow diameter distribution, uniform and stable Fe-W nanoclusters were used as the catalyst precursors. About 90% of as-prepared SWNTs fall into the diameter range 2.0-3.2 nm. Electrical measurement results on individual SWNTs confirm that the selectivity of s-SWNTs is ∼95%. The present study provides an effective strategy for increasing the purity of s-SWNTs via controlling the diameter distribution of SWNTs and adjusting the etchant concentration. Furthermore, by carefully comparing the chirality distributions of Fe-W-catalyzed and Fe-catalyzed SWNTs under different water vapor concentrations, the relationship between the diameter-dependent and electronic-type-dependent etching mechanisms was investigated.

dc.identifier.issn

1936-0851

dc.identifier.issn

1936-086X

dc.identifier.uri

https://hdl.handle.net/10161/19616

dc.language

eng

dc.publisher

American Chemical Society (ACS)

dc.relation.ispartof

ACS nano

dc.relation.isversionof

10.1021/nn503265g

dc.subject

Science & Technology

dc.subject

Physical Sciences

dc.subject

Technology

dc.subject

Chemistry, Multidisciplinary

dc.subject

Chemistry, Physical

dc.subject

Nanoscience & Nanotechnology

dc.subject

Materials Science, Multidisciplinary

dc.subject

Chemistry

dc.subject

Science & Technology - Other Topics

dc.subject

Materials Science

dc.subject

single-walled carbon nanotubes

dc.subject

semiconducting

dc.subject

diameter control

dc.subject

selective etching

dc.subject

Fe-W nanoclusters

dc.subject

FIELD-EFFECT TRANSISTORS

dc.subject

GROWTH

dc.subject

CATALYST

dc.subject

ARRAYS

dc.subject

REACTIVITY

dc.subject

DENSITY

dc.subject

VAPOR

dc.subject

CHEMISTRY

dc.subject

DEVICES

dc.subject

STRAIN

dc.title

Importance of diameter control on selective synthesis of semiconducting single-walled carbon nanotubes.

dc.type

Journal article

duke.contributor.orcid

Finkelstein, Gleb|0000-0002-0883-0741

duke.contributor.orcid

Liu, Jie|0000-0003-0451-6111

pubs.begin-page

8564

pubs.end-page

8572

pubs.issue

8

pubs.organisational-group

Trinity College of Arts & Sciences

pubs.organisational-group

Duke

pubs.organisational-group

Physics

pubs.organisational-group

Duke Institute for Brain Sciences

pubs.organisational-group

University Institutes and Centers

pubs.organisational-group

Institutes and Provost's Academic Units

pubs.organisational-group

Chemistry

pubs.publication-status

Published

pubs.volume

8

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Li_Ke_Liu_Li_Liang_Finkelstein_Wang_Liu_2014_ACS Nano_Importance of Diameter Control on Selective Synthesis of Semiconducting.pdf
Size:
565.31 KB
Format:
Adobe Portable Document Format