Room temperature photoluminescence from In<inf>x</inf>Al<inf>(1-x)</inf>N films deposited by plasma-assisted molecular beam epitaxy

dc.contributor.author

Kong, W

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Mohanta, A

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Roberts, AT

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Jiao, WY

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Fournelle, J

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Kim, TH

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Losurdo, M

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Everitt, HO

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Brown, AS

dc.date.accessioned

2017-03-19T00:56:45Z

dc.date.available

2017-03-19T00:56:45Z

dc.date.issued

2014-09-29

dc.description.abstract

© 2014 AIP Publishing LLC.InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10-12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1-x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

dc.identifier.issn

0003-6951

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https://hdl.handle.net/10161/13872

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AIP Publishing

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Applied Physics Letters

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10.1063/1.4896849

dc.title

Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy

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Journal article

duke.contributor.orcid

Everitt, HO|0000-0002-8141-3768

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13

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Duke

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Electrical and Computer Engineering

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Physics

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Pratt School of Engineering

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Trinity College of Arts & Sciences

pubs.publication-status

Published

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105

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