On the possibility of a shunt-stabilized superlattice terahertz emitter
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High field electronic transport through a strongly coupled superlattice (SL) with a shunting side layer is numerically studied using a drift-diffusion model that includes both vertical and lateral dynamics. The bias voltage corresponds to an average electric field in the negative differential conductivity region of the intrinsic current-field curve of the SL, a condition that generally implies space charge instability. Key structural parameters associated with both the shunt layer and SL are identified for which the shunt layer stabilizes a uniform electric field profile. These results support the possibility to realize a SL-based terahertz oscillator with a carefully designed structure. © 2010 American Institute of Physics.
Published Version (Please cite this version)10.1063/1.3291614
Publication InfoXu, H; & Teitsworth, SW (2010). On the possibility of a shunt-stabilized superlattice terahertz emitter. Applied Physics Letters, 96(2). pp. 22101. 10.1063/1.3291614. Retrieved from https://hdl.handle.net/10161/3244.
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Associate Professor of Physics
Prof. Stephen W. Teitsworth's research centers on experimental, computational, and theoretical studies of deterministic and stochastic nonlinear electronic transport in nanoscale systems. Three particular areas of current interest are: 1) stochastic nonlinear electronic transport phenomena in semiconductor superlattices and tunnel diode arrays; 2) complex bifurcations associated with the deterministic dynamics of electronic transport in negative differential resistance systems; and 3) strategies